| 摘要 |
<p>A device for forming a silicon oxide film comprises a quartz tube (1) housing a substrate comprised of silicon (9), means for heating (2,3) internally said quartz tube and means for delivering and flowing hydrogen gas (7) and oxygen (6) gas into said quartz tube to effect hydrogen combustion, wherein the gas introducing holes (5,4) for selectively delivering and flowing either one of said gases are arranged in the neighborhood to each other while facing each other.</p> |
