| 摘要 |
PURPOSE:To stably grow a thin copper film having an excellent stepped-part covering property and having a low content of impurities in the film in a vapor phase by allowing the vapor of an inorg. copper compd. to react with a reducing gas to deposit metallic copper on a substrate. CONSTITUTION:An evaporator 12 packed with anhydrous copper nitrate is heated 13 to about 210 deg.C to generate the vapor of copper nitrate, and the vapor is supplied to a reaction chamber 15 through a flow control valve 14. Besides, CO is introduced 11 into the chamber 15. Meantime, the inside of the chamber 15 is evacuated by an evacuation system and kept at 0.1Torr. The substrate 16 having a fine connecting hole and placed on a table 17 is simultaneously heated to 300 deg.C. Consequently, metallic copper is deposited on the surface of the substrate 16 by the reaction of the gaseous copper nitrate with CO, and a thin copper film is formed. In addition, also H2 can be used as the reducing gas. |
