发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To reduce the manufacturing cost of the terminal gate array by the method wherein electrostatic-damage preventing elements are arranged in adjacency of a bonding pad of the gate array and a electrostatic-damage preventing circuit for input or output are formed with performing wiring selectively thereby enabling to perform selection whether the elements are for input or for output in the later wiring process. CONSTITUTION:In an input pad 1 and an output pad 2, under a pad part 3 becoming an electrode is a silicon oxide film 4 and around this part is an isolation layer 5. In the input pad 1, an electrostatic-damage preventing elements 6 are connected through a connection 8 to form wiring for input and in the output pad 2, an electrostatic damage preventing elements 7 are connected through a connection 9 to form wiring for output. As these elements 6 and 7 have the same element compositions, these are selected whether they work for the input pad 1 or for the output pad 2 depending on the wiring. Each of pads 1 and 2 is connected to an inner ECL gate array element from said elements 6 and 7 through the connections 10 and 11.
申请公布号 JPS59124740(A) 申请公布日期 1984.07.18
申请号 JP19820233774 申请日期 1982.12.29
申请人 FUJITSU KK 发明人 NATSUME MITSUAKI;SUGIYAMA EIJI;SAITOU TOSHIHARU
分类号 H01L27/04;H01L21/82;H01L21/822;H01L23/00;H01L27/118 主分类号 H01L27/04
代理机构 代理人
主权项
地址