发明名称 |
High voltage MOS transistor |
摘要 |
A MOS transistor is featured by providing mult-layered covering elements for covering a channel region of the semiconductor device. Each of the covering elements is interposed by an insulating layer. Preferably, the covering layers comprise first and second covering layers neither of which are connected to either of the drain electrode, the source electrode, or the gate electrode. A field plate layer, as a third covering layer, is disposed over the first and second covering layers.
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申请公布号 |
US4766474(A) |
申请公布日期 |
1988.08.23 |
申请号 |
US19810267643 |
申请日期 |
1981.05.27 |
申请人 |
SHARP KK |
发明人 |
NAKAGAWA, KIYOTOSHI;MIYANO, KATSUMI;FUJIMOTO, TAKEO |
分类号 |
H01L29/06;H01L29/10;H01L29/40;H01L29/41;H01L29/417;H01L29/78;(IPC1-7):H01L29/78;H01L29/52 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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