发明名称 |
Method of manufacturing contact type one-dimensional image sensor |
摘要 |
A method for manufacturing a contact type one-dimensional image sensor, which includes the step of providing a light receiving element portion composed of one or more of Group II-VI compounds semiconductor containing Cd on a substrate, and also providing a matrix wiring portion on the same substrate as that of the light receiving element portion, and the method is characterized by the step of forming an insulating layer for the formation of the matrix wiring portion in such a manner as to cover the light receiving element portion.
|
申请公布号 |
US4766085(A) |
申请公布日期 |
1988.08.23 |
申请号 |
US19860894051 |
申请日期 |
1986.08.07 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
NISHIGAKI, SATOSHI;KITA, RYUSUKE;TSUCHIMOTO, SHUHEI;RAI, AKITERU;IWASAKI, MASARU;MATSUDA, YUZI;NUKII, TAKASHI |
分类号 |
H01L27/146;H04N1/193;(IPC1-7):H01L31/04 |
主分类号 |
H01L27/146 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|