发明名称 Plating process for an electronic part
摘要 Before Au-plating onto the metallic surface of an electronic part, Ni-plating and then Co-plating are applied to form a primer coating for Au-plating. But in the steps of Ni and Co-platings, hydrogen gas produced during the plating is occluded into a plating layer. On the other hand, when a pellet connected onto an Au-plated metal, an Au-Si alloy is formed, but hydrogen gas in the plating layer remains as voids in the Au-Si alloy during a subsequent heating step of the electronic part, resulting in a serious defect. This invention of a plating method is characterized by annealing after Au-plating of an electronic part to eliminate the residual gas.
申请公布号 US4765528(A) 申请公布日期 1988.08.23
申请号 US19860895842 申请日期 1986.08.12
申请人 HITACHI, LTD. 发明人 SEKIBATA, MASAO;OHTA, TOSHIHIKO;MIYAZAWA, OSAMU
分类号 C25D7/00;C25D5/00;C25D5/12;C25D5/50;H01L21/48;H01L23/495;H01L23/50;H05K1/09;H05K3/24;H05K3/34;(IPC1-7):B23K31/02 主分类号 C25D7/00
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