发明名称 Chemically formed self-aligned structure and wave guide
摘要 The formation of a self-aligned semiconductor structure in a semiconductor substrate is described by providing a first and a second layer or a wave guide of different chemical composition above said semiconductor substrate, said second layer providing a shape defining opening permitting chemical conversion of said first layer adjacent said substrate to a third chemical composition different from said first and second layers. The third chemical composition is removed with a reagent that reacts only with said third composition and not with said first and second layers for the manufacture of self-aligned semiconductor structures. The third chemical composition is retained in the formation of a wave guide and has an index of refraction different from the first layer.
申请公布号 US4766093(A) 申请公布日期 1988.08.23
申请号 US19870062332 申请日期 1987.06.09
申请人 INTERNATIONAL BUSINESS MACHINES CORP. 发明人 HOVEL, HAROLD J.;KUECH, THOMAS F.
分类号 G02B6/13;H01L21/033;H01L21/308;H01L21/316;H01S5/02;(IPC1-7):H01L21/20 主分类号 G02B6/13
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