发明名称 |
Chemically formed self-aligned structure and wave guide |
摘要 |
The formation of a self-aligned semiconductor structure in a semiconductor substrate is described by providing a first and a second layer or a wave guide of different chemical composition above said semiconductor substrate, said second layer providing a shape defining opening permitting chemical conversion of said first layer adjacent said substrate to a third chemical composition different from said first and second layers. The third chemical composition is removed with a reagent that reacts only with said third composition and not with said first and second layers for the manufacture of self-aligned semiconductor structures. The third chemical composition is retained in the formation of a wave guide and has an index of refraction different from the first layer.
|
申请公布号 |
US4766093(A) |
申请公布日期 |
1988.08.23 |
申请号 |
US19870062332 |
申请日期 |
1987.06.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP. |
发明人 |
HOVEL, HAROLD J.;KUECH, THOMAS F. |
分类号 |
G02B6/13;H01L21/033;H01L21/308;H01L21/316;H01S5/02;(IPC1-7):H01L21/20 |
主分类号 |
G02B6/13 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|