发明名称 SEMICONDUCTOR DEVICE
摘要 A multilayer contact is shown having two superimposed conductive layers (14, 16) separated by a barrier layer (15) a first contact (11) extends through the upper conductive layer (14) to the lower conductive layer (16). A second contact (21, 30) separated from the first contact (11) extends to the upper conductive layer (14). A Schottky contact (18, 19) arranged between both contacts (11; 21, 30) on the surface of the upper conductive layer (14) establishes a depletion region (19) within the upper conductive layer (14). Said depletion region (19) electrically controls the current flow path between both contacts (11; 21, 30).
申请公布号 JPS63202075(A) 申请公布日期 1988.08.22
申请号 JP19870248209 申请日期 1987.10.02
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 SAAREN PEREE SUMISU SAADO
分类号 H01L29/80;H01L21/338;H01L23/482;H01L29/10;H01L29/41;H01L29/772;H01L29/778;H01L29/812 主分类号 H01L29/80
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