| 摘要 |
PURPOSE:To obtain a capacitor having high Q by using electrode wiring materials, which are composed of aluminum, etc. having a low resistance value, as two electrodes forming the capacitor. CONSTITUTION:An interlayer insulating film 16 is constituted of a thick first insulating film 17 consisting of a polyimide group resin shaped so as to coat a first wiring layer 15 and a thin second insulating film 18 being made up of an silicon nitride film (Si3N4) formed onto the insulating film 17 and thinner than the first insulating film 17. A through-hole through which first and second wiring layers 15, 19 are connected electrically is shaped by boring both the first and second insulating films 17, 18 through etching, and a capacitor using the first insulating film 17 as a dielectric film is formed to a first insulating film 17 section by removing only the first insulating film 17. Since the capacitor is formed, employing the second insulating film 18 as the dielectric film and the first and second electrode layers 15, 19 as electrodes, the capacitor having high Q, large capacitance and high reliability is incorporated. |
