| 摘要 |
PURPOSE:To prevent that the crystal of an active layer is broken by current conduction, and that a current blocking layer loses it function and the operating current value becomes large, by making larger the refraction index of a first semiconductor layer held between an active layer which becomes a light emitting region and a semiconductor substrate than that of a second semiconductor layer. CONSTITUTION:This semiconductor laser provides, on a semiconductor substrate 1 having a striped groove, a crystal laminated body wherein an active layer 4 which will become light emitting region is interposed by a first and a second semiconductor layers 3', 5 having different refraction indices smaller than such active layer. The refraction index of the first semiconductor layer 3' interposed by the active layer 1 which will become light emitting region and the semiconductor substrate 1 is set larger than that of the second semiconductor layer 5. Moreover, the first semiconductor layer 3' is formed thicker than 0.4 micron. Thereby, generation of pit which causes crystal defect in the active layer can be prevented and the disadvantage that crystal of active layer is broken by current condition and operating current increases because the active layer loses the function of current blocking layer can be removed.
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