发明名称 HIGH-FREQUENCY SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve impedance stability by electrically connecting one parts of first metallic electrodes and one parts of second metallic electrodes for a plurality of impedance conversion circuits to an input pad or an output pad and a grounding pad for a semiconductor chip under the state in which one parts of the first metallic electrodes and one parts of the second metallic electrodes are protruded from a heat-resistant flexible film in predetermined length. CONSTITUTION:One parts of first metallic electrodes 4, 5 and one parts of second metallic electrodes 2 formed onto both surfaces of a heat-resistant flexible film 1 are connected electrically to pads for a semiconductor chip 6 under the state in which they are protruded from the heat-resistant flexible film 1 in prescribed length. Consequently, bonding wires having instable elements need not be used, and the impedance characteristics of high frequency are not changed. The second metallic electrodes 2 shaped onto approximately the whole surface of the reverse main surface side of the heat-resistant flexible film 1 are connected electrically to grounding pads for the semiconductor chip 6 at the shortest distances, thus minimally inhibiting a feedback element, then also reducing the lowering of the gains of a transistor.
申请公布号 JPS63202926(A) 申请公布日期 1988.08.22
申请号 JP19870035016 申请日期 1987.02.18
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 ISHIKAWA OSAMU
分类号 H01L21/60 主分类号 H01L21/60
代理机构 代理人
主权项
地址