| 摘要 |
PURPOSE:To manufacture a multilayer interconnection with a through-hole having a gentle shape through a simple process by conducting the application and baking of an organic insulating film twice or more, lowering a baking temperature to a preceding process. CONSTITUTION:The application and baking of organic insulating films 3, 4 on a semiconductor substrate l are performed twice or more, lowering a baking temperature to a preceding process, thus increasing an etching rate at the time of wet etching in upper layers. Consequently, the shape of a through hole after etching can be made gentle, thus preventing the disconnection of wirings shaped to the through-hole in the insulating films 3, 4. The gentle through-hole can be formed only by the process of the change of the baking temperature, thus preventing the complication of a manufacturing process. |
