| 摘要 |
PURPOSE:To prevent a short circuit and disconnections, and to form an insulating film and an electrode excellently by etching the second insulating film and a first resistor through a photo-resist film, forming the first resistor in a tapered manner and forming a second resistor to a tapered shape reverse to the first resistor. CONSTITUTION:Second insulating films 4 and first resistors 3 are etched through photo-resist films 5, and the first resistors 3... are etched in an tapered manner. When silicon nitride films are used as the second insulating films 4 and polysilicon as the first resistors 3..., taper angles are controlled and the resistors 3... can be etched when the film thickness of the silicon nitride films 4 are controlled and shaped previously because the etching rates of the silicon nitrode films 4 are made higher than the polysilicon films 3 approximately twice. Consequently, a short circuit and disconnection can be prevented. Since second resistors 7... are formed to a tapered shape in the direction opposite to the first resistors 3..., the surfaces of the second resistors 7... are flattened, and a fifth insulating film 10 and an electrode 11 can be formed excellently.
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