| 摘要 |
PURPOSE:To prevent warping in a semiconductor substrate without a time for forming, by additionally manufacturing a semiconductor substrate having protruding and recess parts, which are complementary to recess and protruding parts of another semiconductor substrate, bonding both substrates through an insulating film and thereafter polishing the substrates. CONSTITUTION:An oxide film 2a is formed on a silicon substrate 1a. A patterned oxide film 2b is similarly formed on a silicon substrate 1b, which is separately prepared. The patterns of the oxide films 2a and 2b are complementary to each other. Oxide films 4a and 4b are formed on a high concentration impurity diffused layer 3 of the silicon substrate 1a and on the silicon substrate 1b, respectively. SOG 5 is further applied on the oxide film 4a on the silicon substrate 1a. The silicon substrates 1a and 1b are tightly contacted, and heat treatment is performed. Then the SOG 5 is chemically bonded to the oxide films 4a and 4b, and both films are bonded as a unitary body. After the separately manufactured two semiconductor substrates are bonded, polishing is performed. Thus the forming time of a conventional polysilicon layer is not required, and the warping problem of the semiconductor substrates is eliminated.
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