| 摘要 |
PURPOSE:To execute heat treatment in a short time to form a thick-film at a low temperature by connecting a gas pressure device pressing a supply gas to a reaction vessel. CONSTITUTION:A cover body 11 capable of closing the inside of a chamber 1a is mounted to the opening section of a reaction vessel 1 in an open-close-free manner. A gas pressurizing device 12 consisting of a compressor is connected to the reaction vessel 1, and constituted so as to pressurize a gas fed into the chamber 1a. Consequently, the inside of the chamber 1a for the reaction vessel 1 can be brought to a high pressure atmosphere. Accordingly, a thick-film can be thermally treated in a short time to form the thick-film on the surface of a semiconductor wafer 3 at a low temperature.
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