| 摘要 |
PURPOSE:To use a small-size component in terms of structure by connecting a gate electrode of a metallic semiconductor field effect transistor MESFET amplifying a high frequency signal to a prescribed potential point via a Schottky diode element connected in series therewith in a polarity opposite to the polarity of the Schottky junction so as to reduce number of components. CONSTITUTION:A gate current IGS does not almost flows with a small signal given and the self-bias of the FET 10 is operated normally. As an input power incrreases gradually, the gate current IGS is increased in an opposite direction to the direction shown in figure B. Since the Schottky diode 12a is connected in the forward direction with respect to the current, a negative gate current flows as it is. In increasing the input power, the Schottky diode 128 is converted from the conducting state into the high resistance state to block the flow of the gate current IGS. Thus, a negative voltage appears at the gate electrode of the FET 10, its bias state is approached to the pinch-off state to offer the region of the class C operation.
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