| 摘要 |
PURPOSE:To prevent the decrease in operating speed of a semiconductor device and the increase in current consumption, by heat-treating only high-melting-point metal silicide at a step part using laser light, and changing the crystal structure. CONSTITUTION:An SOG (Spin on Glass) film is applied and formed on the surface of a high-melting-point silicide film 3 so that the film is thin at a flat part and thick at a step part 1. When laser light is projected on the surface of the SOG film 5 by utilizing the difference in thickness, heat treatment is applied only to the high-melting-point metal silicide film 3 formed at the step part. As a result, nonaligned part plane 4, which is yielded at the step part 1 when the high-melting-point metal silicide film 3 is formed, is removed. Even if internal stress, which is yielded by contraction accompanied by the change in crystal structure of the high-melting-point metal silicide at the flat part, is concentrated at the step part in heat treatment in later steps, the high-melting- point silicide at the step part 1 does not disappear. The silicide is kept intact. Thus the delay in operating speed of a semiconductor device and the increase in current consumption can be prevented.
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