A semiconductor fused programmable read only memory having a fuse resistor formed on an insulator film of the surface of a substrate. An island region having a conductivity opposite to that of the surrounding region is formed below the fuse resistor for avoiding excess current flow through the substrate.
申请公布号
DE3121449(C2)
申请公布日期
1988.08.18
申请号
DE19813121449
申请日期
1981.05.29
申请人
TOKYO SHIBAURA DENKI K.K., KAWASAKI, KANAGAWA, JP
发明人
KIHARA, KAZUO, TOKYO, JP;IKEDA, MASASHI, URAWA, SAITAMA, JP
