SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE:To suppress errors of potential measurement caused by static charge of the protective oxide film on the surface of an integrated circuit by a method wherein the required region of the protective oxide film on the electrode part other then the pad of the integrated circuit is removed to form a window for electron beam application. CONSTITUTION:In order to measure the potential of the drain 8 of a MOS-FET 1, a window 6 is formed by etching in a protective oxide film 5 on a metal wiring 4 drawn out from the drain 8. An electron beam 23 emitted from an electron gun 21 is condensed by a magnet 22 and applied to an observed point through the window 6 of a device on a wafer 24. Test patterns are inputted to the device through probers 27. A scattered electron beam 25 whose intensity depends on the potential of the observed point is measured by an electron beam intensity meter 26 and potential of the observed point corresponding to the test pattern is detected.