| 摘要 |
PURPOSE:To manufacture a semiconductor laser for efficiently oscillating with high speed modulation by forming a laminated layer structure on a substrate, forming a 3-step shape having a diffraction grating made of periodic uneven surfaces on the sidewall, laminating an active layer and a P-type conductive layer, and forming electrodes on the laminate. CONSTITUTION:A laminated structure of a semi-insulating buffer layer 11, an n<+> type conductive layer 12 and a semiinsulating cap layer 13 is formed by a vapor growth method on an iron-doped semi-insulating InP substrate 10. Then, an SiO2 mask layer 27, and a Ti mask layer 26 are sequentially formed on the structure, a pattern of an electron beam resist 30 is formed, and a stepwise shape having a diffraction grating 28 including a periodic uneven surface on its sidewall is formed. Then, an active layer and a P-type conductive layer, etc., are laminated by a vapor growth method, and electrodes are formed by a photolithography on the laminate. Here, since a product has a small parasitic capacity, a high speed modulation of, for example, 10Gb/sec is performed whole holding an axial sole mode. Since an injecting current flows only to the active region, a high efficiency oscillation is achieved. Further, a product having excellent uniformity and reproducibility can be manufactured with high yield. |
