| 摘要 |
PURPOSE:To improve yield in heat treatment of a large aperture wafer or the like with radiation of electron beams by providing means for changing dimension and position of a mask aperture at an aperture part which is disposed in the vicinity of a linear electron beam radiation surface of a sample. CONSTITUTION:Linear electron beams 4 emitted from an electron gun, which is composed of a linear cathode 1, a Wehnelt electrode 2, and an anode 3, are focused as linear electron beams on a sample 9 by a lens 5. The focused linear electron beams are scanned on the sample 9 by a deflector 6. A XY slit 8 is moved by a XY slit driving system 14 so that a mask has a desired aperture dimension and a mask aperture part is positioned at a prescribed place. Then, since four sheets of slits can be driven independently, width and position of the mask aperture can be arbitrarily set up. Hence, heat treatment by electron beam radiation can be performed uniformly without irregularity in a large area region.
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