| 摘要 |
PURPOSE:To reduce variations of the boundary levels between oxide films and Si substrates and the film thicknesses of the oxide films and further make the oxide films stable by supplying hydrogen gas and oxygen gas simultaneously or supplying hydrogen gas before oxygen gas into a quartz tube. CONSTITUTION:The inside of a quartz tube 1 which is heated by a heating part 3 is filled with nitrogen gas. Then, hydrogen gas and oxygen gas are supplied simultaneously from gas inlets 4 and 5 of gas introducing tubes 6 and 7 or hydrogen gas and oxygen gas are simultaneously supplied after mixed gas composed of hydrogen gas and nitrogen gas is supplied to form an oxide film.
|
