| 摘要 |
PURPOSE:To prevent a silicide layer from short-circuiting by silicifying a metal film in a state that the film is removed from a step including the side face of an insulating film covered on the side of a gate electrode. CONSTITUTION:The surface of an Si substrate 21 is isolatedly divided by a field oxide film 22 into a filed region 23 and an active region 24. Then, a gate oxide film 25 is grown on the region 24 to form a polycrystalline Si gate electrode 26, the side of the electrode 26 is covered with an Si oxide film 27, and source, drain diffused layers 28 are further formed. Thereafter, a metal film 29 is deposited on the whole surface. Then, a protective film 30 is formed by a bias sputtering method. When it is formed by the method, the film 30 is formed only on a flat part on the film 29. Then, with the film 30 as a mask the film 29 of the step including the side of the film 27 is removed. Thereafter, after the film 30 as the mask is removed, it is heat treated to form the film 29 remaining on the electrode 26 and the layer 28 as a silicide layer 31. Since the film 29 does not exist on the side of the film 27 at this time, no short-circuit take place between the electrode 26 and the layer 28.
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