发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To let a probe needle penetrate a protective film easily by a method wherein uneven parts are produced on the surface of a test pad and on the surface of a protective film by forming a dummy pattern so that a boundary part between these uneven parts can function as a part to be hooked by the probe needle. CONSTITUTION:After a polysilicon layer has been patterned at the underside and in the central part of a test pad 2, a cross-shaped dummy pattern 5 is formed. Because this dummy pattern 5 exists, uneven parts are produced on the surface of the test pad 2 and a protective film 9. By this setup, when a probe needle 10 is to be thrusted onto the test pad 2, the probe needle 10 is hooked at a boundary part between the uneven parts; accordingly, it is simple to cause the state that the probe needle 10 pierces through the protective film 9 and that the test pad 2 comes into contact with the probe needle 10.
申请公布号 JPS63198346(A) 申请公布日期 1988.08.17
申请号 JP19870031724 申请日期 1987.02.13
申请人 MATSUSHITA ELECTRONICS CORP 发明人 TANIGUCHI TAKASHI;SUMI TATSUMI;HIRANO HIROSHIGE;KURIYAMA HIROKO;TERAKAWA SUMIO;NAKANE JOJI;KISHIMOTO MIKIO
分类号 H01L21/66;H01L21/3205;H01L23/52 主分类号 H01L21/66
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