| 摘要 |
PURPOSE:To effectively inject a carrier into a quantum well box by a method wherein the potential energy of a first quantum barrier region is made to be higher than the potential energy of the quantum well box and the potential energy of a second quantum barrier layer is made to be higher than the potential energy of the first quantum barrier layer. CONSTITUTION:The following three are provided: at least one or more of a quantum well box 15 composed of a semiconductor whose thickness is about the de Broglie wavelength (several tens nm) of an electron; at least one or more of a first laminar quantum barrier region which surrounds the quantum well boxes 15 and whose thickness is about the de Broglie wavelength of the electron; at least two or more of second quantum barrier layers 13a, 13b which are situated to be adjacent to the upper face and the lower face of the first quantum barrier region 14. The potential energy of the first quantum barrier region 14 is made to be higher than the potential energy of the quantum well boxes 15; the potential energy of the second quantum barrier layers 13a, 13b is made to be higher than the potential energy of the first quantum barrier layer 14. By this setup, it is possible to inject a carrier into the quantum well boxes; a laser-oscillation threshold current becomes a very small value.
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