| 摘要 |
<p>PCT No. PCT/GB89/00797 Sec. 371 Date Jan. 14, 1991 Sec. 102(e) Date Jan. 14, 1991 PCT Filed Jul. 13, 1989 PCT Pub. No. WO90/00817 PCT Pub. Date Jan. 25, 1990.A method of making an electrical device comprising two electrodes and a body of a switching material formed by reacting amorphous silicon or silicon compound with a passivating agent to remove or reduce the number of unpaired electrons occuring therein. The method includes a forming step in which a forming current is passed through the amorphous silicon layer so as to form an n- or p- doped amorphous silicon layer adjacent to one of the electrodes. The doped silicon layer extends over part only of the device so that the forming current is at most 400 mA. The device exhibits a voltage controlled negative resistance (VCNR) and may be employed for example for transient protection.</p> |
