发明名称 CHARGED-BEAM LITHOGRAPHY METHOD
摘要 PURPOSE:To execute data compression processing without generating the multiple exposure region of a pattern, and to improve the precision of lithographing and a throughput by developing design figure groups regarding the overlapping sections of design figure groups included in a plurality of pattern data files to a host file. CONSTITUTION:A desired pattern is drawn on the basis of lithographic pattern data formed from the design pattern data of an LSI. The formation of overlapping regions on coordinates displaying the whole LSI chip in design figures included in a plurality of pattern data files constituting design pattern data is decided in such a lithography method. Design figure group information regarding the overlapping regions is contained in a host file including the reference information of a lower file when the presence of overlapping regions is decided, and a novel pattern data file is prepared. The overlapping sections of design figures contained in all pattern data files are removed, and the figures are divided into fundamental figure groups acceptable as a charged-beam drawing device, thus forming drawing pattern data.
申请公布号 JPS63199422(A) 申请公布日期 1988.08.17
申请号 JP19870032719 申请日期 1987.02.16
申请人 TOSHIBA CORP 发明人 IKENAGA OSAMU
分类号 H01L21/30;H01L21/027 主分类号 H01L21/30
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