发明名称 MANUFACTURE OF VIBRATION SENSOR
摘要 PURPOSE:To realize a batch process and to reduce the cost by a method wherein more than one vibration sensor is formed on a wafer-like semiconductor substrate and the wafer-like semiconductor substrate is divided for each vibration sensor. CONSTITUTION:More than one beam 9 is formed at a wafer-like semiconductor substrate 1; for each beam 9 constituting one vibration sensor, the beams 9 are sealed airtightly by a cover material 14 in a vacuum atmosphere on the side of the semiconductor substrate 1 by keeping a prescribed space. More than one vibration sensor is formed on the wafer-like semiconductor substrate 1; after that, the wafer-like semiconductor substrate 1 is divided for each vibration sensor. That is to say, if the cover material 14 is composed of a semiconductor material, a structure to keep the beams 9 in the vacuum atmosphere can be formed during the process of a wafer if the semiconductor wafer where the beams 9 are formed and the semiconductor wafer for the cover material are sealed airtightly in the vacuum atmosphere before the structure is divided into individual chips for the vibration sensor. By this setup, the vibration sensor can be manufactured by a batch process; the cost can be reduced.
申请公布号 JPS63198378(A) 申请公布日期 1988.08.17
申请号 JP19870029823 申请日期 1987.02.13
申请人 NISSAN MOTOR CO LTD 发明人 SHINOHARA TOSHIAKI;YAO TAKEYUKI
分类号 H01L29/84;G01H11/06;H01L21/822;H01L23/02;H01L27/04;H01L29/78 主分类号 H01L29/84
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