发明名称 METHOD AND DEVICE FOR MEASURING TEMPERATURE OF SEMICONDUCTOR SUBSTRATE
摘要 PURPOSE:To measure temperature without contaminating a wafer nor limiting a temperature measurement range by projecting light for temperature measurement on the surface on the wafer and detecting the base absorption end wavelength of the wave that transmitted light contains, and thus finding the temperature. CONSTITUTION:The wafer 5 placed in a heat treating furnace 2 made of quartz glass is heated by a light source 3 for heating. The light of a light source 7 for temperature measurement which is converged through a concave mirror 8 is intermitted by a mechanical chopper 9 and projected on the wafer 5 through an optical fiber 10 and a lens 11. Its transmitted light is incident on the spectroscope 15 of a base absorption end wavelength detection part M through a lens 12, an optical fiber 13, and a lens 14. The detection part M removes the influence of disturbing light due to a light source 3 for heating and detects the base absorption end wavelength lambda0 which is in inverse proportion to the inhibition band width Eg of the wafer 5. This lambda0 shifts to a longer-wavelength side as the temperature of the substrate rises, so the temperature can be measured without contacting. Consequently, the wafer is never contaminated. Further, the temperature measurement range is not limited unlike temperature measurement by radiant energy.
申请公布号 JPS63198837(A) 申请公布日期 1988.08.17
申请号 JP19870030494 申请日期 1987.02.12
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 CHIBA TAKATOSHI;TERAOKA HIDEYUKI;YAMAMOTO SATOSHI
分类号 G01K11/00;G01J5/00;G01J5/58;G01J5/62;G01K11/12 主分类号 G01K11/00
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