| 摘要 |
PURPOSE:To obtain an epitaxially grown layer of high quality by spraying cooling gas to a wafer which has been epitaxially grown to quickly cool the wafer. CONSTITUTION:A substrate to be crystal-grown on a well on the upper surface of a slider boat 1, such as a CdTe substrate 4 is held, a slide rod 6 can slide a melt reservoir 2, a slide rod 7 slides the boat 1 to move the whole including the reservoir 2 in a reaction tube 8, and an epitaxial layer is grown at approx. 450 deg.C. In a cooling process, the boat 1 is moved to a cooler, a valve 10 is simultaneously opened, gas 11 is sprayed to the surface of the substrate 4 to forcibly cool an HgCdTe epitaxial layer. Thus, the surface of the HgCdTe is quickly cooled to suppress the scattering of mercury to a small value and to eliminate the generation of Te inclusion, thereby epitaxially growing it in a high quality.
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