| 摘要 |
PURPOSE:To effectively inject a carrier into a quantum well box by a method wherein the potential energy of the quantum well box is made to be lower than the potential energy of a quantum well plane. CONSTITUTION:At least one or more of a quantum well structure is provided in such a way that it is constituted by the following: a quantum well plane 14 composed of a planar semiconductor whose layer thickness is about the de Broglie wavelength (several tens nm) of an electron; at least more than one of a quantum well box 15 which is situated to be adjacent to the quantum well plane 14 and which is composed of a box-shaped semiconductor whose thickness is about the de Broglie wavelength of the electron. The potential energy of the quantum well boxes 15 is made to be lower than the potential energy of the quantum well plane 14. Accordingly, a carrier which has been injected into the quantum well plane 14 from the vertical direction surely reaches either the quantum well plane 14 or the quantum well boxes 15. The carrier which has been injected into the quantum well plane 14 loses its energy due to the relaxation inside a band, and is lowered to a level inside the quantum well boxes 15. By this setup, the carrier which has been injected from the outside of a superlattice is injected into the quantum well boxes 15 effectively.
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