| 摘要 |
PURPOSE:To enable removal of bad effects due to probe stylus pressure upon measuring electrical characteristics, by mounting an electrode on a junction and forming a material layer, whose hardness is larger than that of said electrode, partially on the electrode and forming a metallic film on this material layer so that the metallic film is connected with the electrode. CONSTITUTION:This device is provided with the following parts: an electrode 6 which is mounted on a junction, a material layer 7 which is formed partially on the electrode 6 and whose hardness is larger than that of the electrode 6, a metallic film 8 which is formed at least on the material layer 7 and connected with the electrode 6. For example, in an epitaxial layer 2 on a semiconductor substrate 1 such as a n<++> type silicon substrate, a p-n junction which is small in junction depth and of super-step structure and consists of semiconductor regions 4 and 5 is formed so as to become a varicap diode. On the electrode 6 used for this diode and made of an aluminium film, an insulating film 7 such an SiO2 film or an Si3N4 film, which is large in hardness, is formed to have an opening 7a and to cover one corner part of the electrode 6 and only an insulating film 3. Then, a metallic film 8 such as an Al film and AlSi film for probe measurement is formed on the electrode 6 through the opening 7a. |
