| 摘要 |
PURPOSE:To make one memory cell composed of one transistor so as to realize high integration, by disposing a capacity setting-up electrode connected with either a control gate electrode or a floating gate electrode so that this capacity setting-up electrode is laminated through an insulating film so as to set up capacity between this electrode and the other electrode which is not connected with this electrode. CONSTITUTION:A control gate electrode 15 is formed on a semiconductor substrate 11 through a gate insulating film 14, and a floating gate electrode 17 is formed on the semiconductor substrate 11 through a tunnel oxidizing film 16 which corresponds with a drain region 13. Further, a capacity setting-up electrode 19 is disposed to be connected with either said control gate electrode 15 or said floating gate electrode 17 so that this capacity setting up electrode is laminated through an insulating film 18 so as to set up capacity between this electrode and either the floating gate electrode 17 or the control gate electrode 15. Said control gate electrode 15 is used for control during writing-in and erasing processing, and besides used as a select gate during readout processing.
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