Method of manufacturing a semiconductor device comprising an isolation structure.

摘要

A method (fig. 3) where following etch definition of a trench (9) in silicon, the walls of this trench (9) are coated with a layer of polysilicon (11) and the latter oxidised (13). The trench (9) is then infilled e.g. with deposited polysilicon (15). The walls of the trench (9) may be oxidised to provide a thin oxide film (12) prior to polysilicon (11) deposition.