| 摘要 |
PURPOSE:To improve the assembling operability of a semiconductor device and to reduce the inductance of wirings by connecting the metallized layer of a conductive chip to the electrodes of a semiconductor element by fine metal wirings. CONSTITUTION:A semiconductor element 8 is secured onto a metallized layer 9, and conductive chips 10 are secured to a position near the element 8 on the metallized layer 3', a position near the element 8 on the layer 3, and a position near the element 8 on the layer 9. Then, the input side electrode of the surface of the element 8 is connected by input side electrode wiring metal fine wiring 6 to the surface of the chip 10, the output side electrode on the surface of the element 8 is connected by output side electrode wiring metal fine wiring 6 to the surface of the chip 10, and the ground side electrode on the surface of the element 8 is connected by ground side electrode wiring metal fine wiring 6 to the surface of the chip 10. Thus, the wiring work with the fine metal wirings can be simply performed, and the wirings 6 to be wired can be shortened, thereby minimizing the inductance due to the wirings. |
