| 摘要 |
PURPOSE:To eliminate the imperfect blowing of a fuse by a method wherein an insulating film at the substratum of the fuse is formed in such a way that it is thicker than another insulating film at the circumference of the fuse. CONSTITUTION:A polysilicon fuse 1 is formed on an insulating film 2 which is thicker than an insulating film 6 at the circumference of the fuse; the insulating film 6 is formed on a semiconductor substrate 7; its uppermost face is covered with a passivating film 5. If a laser beam irradiates a part 8 to be irradiated at the fuse 1, its energy is absorbed by the polysilicon fuse 1 and the fuse 1 is blown in such a way that an opening 9 is left. During this process, because also the passivating film 5 at the side of the fuse 1 is broken completely, it is not possible that the fuse is connected again by polysilicon. By this setup, the imperfect blowing of the fuse 1 is eliminated; a semiconductor device of high reliability is obtained.
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