| 摘要 |
The cathode is bombarded by ions with energy of 1-5 key under a low pressure gas and liberates neutral atoms. If the cathode is refrigerated to prevent diffusion and vaporisation, the material liberated and deposited on the film has same composition as the cathode. By applying an electrostatic potential to the substrate, bombardment of the film during deposition by gas ions causes preferential displacement of one alloy constituent and permits composition control by variation of applied potential. Gas ions are suitably A. The procedure is effective for elements of different atomic dia., e.g. Fe-Gd. Where atomic size is similar, e.g. Fe-Ni, procedure is not effective up to high applied potentials. |
