| 摘要 |
PURPOSE:To enlarge the effective area of a capacitor electrode, and increase capacitance, by arranging a polysilicon film connecting to the capacitor electrode on the cell plate of a stud capacitor. CONSTITUTION:A contact hole 26 is formed by etching a cell plate 20, and a capacitor insulation film 21 is formed by oxidizing the surface of the cell plate 20. Polysilicon is buried in the contact hole 26 by deposition, and a polysilicon film 22 is formed by patterning. An SiO2 film 27 is formed on the surface of the film 22 by block oxidizing. Consequently, the film 22 is connected to an electrode 15, whose effective area is enlarged, so that the capacitance increases. |
