| 摘要 |
PURPOSE:To form a fine pattern at high speed and with high precision by a method wherein each merit of an electron beam lithography means and a light exposing (transfer, projection and lithography) means is utilized to bear roles in common. CONSTITUTION:A light exposure ends instantaneously, but as a single stroke drawing technique is used for an electron beam lithography, it takes a long time to form a pattern. Accordingly, if fine patterns (electron beam lithography patterns) 1 and 2 only are lithographed with an electron beam, a pattern can be formed in a very short time and if a light exposure and an electron beam lithography are performed in parallel, a pattern can be formed in higher speed. For example, by using a combined device of a lithography equipment using a field emission type electron gun and a projection type exposing device, a pattern forming region is simultaneously lithographed and exposed at the same time as the pattern is formed.
|
