| 发明名称 |
Process for making high performance CMOS and bipolar integrated devices on one substrate with reduced cell size |
| 摘要 |
There is disclosed a high performance MOS transistor structure of either the N channel or P channel variety and a high performance bipolar transistor structure. A process is disclosed which can make high performance CMOS and high performance bipolar devices on the same die.
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| 申请公布号 |
US4764480(A) |
申请公布日期 |
1988.08.16 |
| 申请号 |
US19870113417 |
申请日期 |
1987.10.23 |
| 申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
VORA, MADHUKAR B. |
| 分类号 |
H01L21/8244;H01L21/8249;H01L27/11;H01L29/04;H01L29/08;H01L29/45;(IPC1-7):H01L21/22;H01L21/225 |
主分类号 |
H01L21/8244 |
| 代理机构 |
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代理人 |
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| 主权项 |
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