| 摘要 |
PURPOSE:To obtain a high fusing point metallic film excellent in rigidity and to prevent protrusions from generating in an upper and a lateral face of a thin film metallic layer micro-wire, whereby to prevent a wiring from short circuit by a method wherein a surface of Al or Al alloy is coated with a high fusing point metallic layer through ions implantation. CONSTITUTION:A lower layer insulating film 2 is formed on a Si water surface in which various element structures have been built, and a process follows, wherein an Al.Si micro-wire 3A is formed by etching after the formation of an Al.Si film. Then, high fusing point metal ions, such as Ti, V, Nb, Mo, Hf, Ta, W and the like are implanted into the micro-wire 3A from the upper and the lateral face for the formation of a high fusing point metallic film 6. After ions implantation, annealing is performed in Ar to mend the damaged ions implanted layer and micro-wire 3A and render them low in resistance. Thereby, the upper and the lateral face of the thin film metallic wire are coated with the high fusing point metallic film, whereby the surface protrusions (hillock) are prevented from generating and therefore a short circuit is prevented.
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