| 摘要 |
PURPOSE:To manufacture a gas source cell in less power comsumption and gas discharge deteriorating the characteristics of thin films by a method wherein a part of gas channel leading material gas to a gas heating part made of high melting point metal is made of non-metallic material. CONSTITUTION:Heating elements 5, a heat shield 6 and an inner heat shield 8 are made of Ta. A duct 2 and a heat insulator 9 are respectively made of stainless steel and quarz glass. A gas heating part 1 is heated by the heating elements 5 to control the power of heating elements 5 by output from a thermocouple 10 while arsine is led in the heating part 1 through the duct 2 and a heat insulator 9. Arsine is thermo-cracked into hydrogen and arsenic to be jetted out. The thermal cracking is accelerated by catalytic action of Ta comprising the heating part 1. Furthermore, the heat radiation from the heating part 1 to the heat insulator 9 and the duct 2 is shielded by the inner heat shield 8 while reducing the heat conduction from the heating part 1 to the duct 2 by the heat insulator 9 so that the rising temperature in a flange may be minimized to increase the thermal efficiency. By means of such a device, excellent thin film can be deposited.
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