发明名称 |
Semiconductor integrated circuit device and method of manufacturing the same |
摘要 |
A semiconductor integrated circuit device, especially an EPROM (Electrically Programmable Read Only Memory) device which consists of an MIS type memory transistor portion having a floating gate electrode and a control gate electrode on said floating gate electrode, and of an MIS type transistor portion having a gate electrode is formed by patterning the same conductor layer as the floating gate electrode in the periphery of said MIS type memory transistor portion.
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申请公布号 |
US4764479(A) |
申请公布日期 |
1988.08.16 |
申请号 |
US19860897391 |
申请日期 |
1986.08.15 |
申请人 |
HITACHI, LIMITED |
发明人 |
KOSA, YASUNOBU;KOMORI, KAZUHIRO |
分类号 |
H01L27/112;H01L21/28;H01L21/8246;H01L21/8247;H01L27/105;H01L29/49;H01L29/788;H01L29/792;(IPC1-7):H01L29/78 |
主分类号 |
H01L27/112 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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