发明名称 Semiconductor device and process for producing the same
摘要 A semiconductor device having improved heat-dissipating characteristics employs a thin insulator film made of diamond, which has excellent thermal conductivity, as an insulator film which is formed on a chip immediately below a heat-dissipating bump electrode. Since the thin diamond film has excellent insulating properties and high thermal conductivity, it is possible to improve heat-dissipating characteristics of even a high-power semiconductor device such as a multichip module. In the case of, particularly, a multichip module, the insulation between a mother chip and a child chip can also be ensured by the presence of the thin diamond film.
申请公布号 US4764804(A) 申请公布日期 1988.08.16
申请号 US19870015019 申请日期 1987.02.17
申请人 HITACHI, LTD. 发明人 SAHARA, KUNIZO;OTSUKA, KANJI;ISHIDA, HISASHI
分类号 H01L23/36;H01L23/24;H01L23/373;H01L25/07;(IPC1-7):H01L23/26 主分类号 H01L23/36
代理机构 代理人
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