| 摘要 |
PURPOSE:To dispense with a spin on glass (SOG) coating and thereby to improve in quality a device incorporating a multilayer interconnection structure by a method wherein an insulating film is formed on a semiconductor substrate with a recess on its surface and a first-layer electrode metal layer is formed in the recess for the flattening of an interlayer insulating film. CONSTITUTION:A recess is provided on the surface of a silicon substrate 1 and, thereon, a silicon oxide film 2 is formed. A process follows wherein a first-layer electrode metal layer 3 is formed in the recess now covered by the silicon oxide film 2. In this way, an interlayer insulating film P-SiN 4 may be formed flat. Accordingly, the process of applying SOG for flattening may be dispensed with. Problems of SOG-caused electrode corrosion or interlayer insulating film rupture may be solved, which ensures an improved quality.
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