| 摘要 |
PURPOSE:To form a shallow junction by a method wherein a lamp annealing device is provided with an impurity gas feeder to diffuse impurity gas instantaneously on a semiconductor device. CONSTITUTION:A semiconductor device 2 is inserted into a quartz tube 1 fed with N2 at room temperature and then vacuumized by a vacuum pump 4. After heating the tube 1 by lamps 3 and attaining a specified temperature, mixed gas of POCl, O2 and diluting N2 is fed to the quartz tube 1 to be diffused for several seconds-several minutes and then returned to room temperature and atmospheric pressure to pick up the semiconductor device 2. In such a constitution, shallow junction can be formed stably during short time process. Besides, as for boron diffusion, formula of BCl3+H2+O2+N2 is applicable.
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