METHOD OF MAKING HIGH TEMPERATURE ELECTRICAL CONTACTS FOR SILICON DEVICES,申请号USD3490142-传众专利搜索

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发明名称	METHOD OF MAKING HIGH TEMPERATURE ELECTRICAL CONTACTS FOR SILICON DEVICES
摘要
申请公布号	US3490142(A)	申请公布日期	1970.01.20
申请号	USD3490142	申请日期	1967.04.21
申请人	TEXAS INSTRUMENTS INC.	发明人	JAMES A. CUNNINGHAM
分类号	H01L21/00;H01L21/285;H01L23/485;(IPC1-7):B01J17/00;H01L7/00	主分类号	H01L21/00
代理机构		代理人
主权项
地址

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