| 摘要 |
PURPOSE:To reliably remove a resist on the central part of a wafer in a short time by a method wherein low-voltage mercury-arc lamps are arranged at equal intervals over the wafer, the aperture ends of the nozzles of the mercury- arc lamps are spread between the lamps and process gas is jetted on the residual resist on the wafer. CONSTITUTION:O2 is introduced in a treating chamber 15 from a gas supply source 16 through a plurality of nozzles 13. The O2 absorbs the ultraviolet rays of low-voltage mercury-arc lamps 12, is turned into ozone and moreover, is turned into O atoms in an excitation state. A residual photo resist on a wafer 10 reacts with the O atoms in an excitation state, is turned into CO2 and so on and is removed. In this case, the linear parts 12c of the mercury-arc lamps are ready-provided over the central part (a) of the wafer 10 as well, the ultraviolet intensity of the central part (a) is large. Therefore, the O atoms in an excited state, which are supplied to the central part (a), are increased and the reaction of the photo resist removal is promoted. Moreover, as the intervals between the linear parts of the lamps 12 are made equal, the reaction of the photo resist removal takes place uniformly.
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