Method for producing a coating layer for semiconductor technology and also use of the coating layer

摘要

A coating layer (2) for semiconductor technology having an edge contour which has a wedge-shaped cross section is produced by predominantly anisotropic dry etching of the coating layer (2) through a mask (4) disposed in front of the coating layer (2) at a finite mask distance (A). The coating layer (2) etched in this manner is especially well suited as an insulating substrate for a field plate in the edge region of a P-N junction emerging at the surface and also as implantation mask for producing a P-N junction with lateral doping gradients.