| 摘要 |
PURPOSE:To protect diamond from conversion into graphite and thereby produce highly conductive semiconductor diamond by a method wherein ionimplanted diamond is subjected to annealing under pressure and temperature not damaging its stability. CONSTITUTION:A diamond single crystal is heated under high pressure, not harming diamond in terms of its stability, for the removal of defects from its impurity-containing layer. Diamond is stable under high pressure. Even at a temperature of 3000 deg.k or higher, diamond remain stable, when temperature is elevated to this point while pressure is kept within a safe range, which ensures an adequately effective annealing process for diamond. Accordingly, in this way, when diamond is kept under a high pressure where diamond retains its stability, annealing may be accomplished at a temperature not lower than 1900 deg.k. In this way, diamond crystalline structure may be restored nearly completely, and impurities in diamond may be activated.
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